9:15

Welcome

9:30

Eli Kapon

Quantum nanostructures grown on nonplanar substrates: Self-ordering mechanisms, electronic properties, and device applications

IMO-EPFL, Lausanne, Switzerland

10:00

Mark L. Leadbeater

Low-dimensional devices fabricated by MBE regrowth over a patterned delta-doped backgate

Toshiba Cambridge Research Center, UK

10:15

Mohamed Henini

Influence of high-index substrates of the self-assembling of InAs/GaAs quantum dots

U. of Nottingham, UK

10:30

Hadas Shtrikman

Non-(100) GaAs: A preferable platform for high quality GaAs/AlGaAs heterostructures

Weizmann Inst. of Science, Rehovot, Israel

10:45

Coffee Break

11:15

Henri Mariette

Formation of II-VI nanostructures on vicinal surfaces

CEA-CNRS, Grenoble, France

11:45

David Martrou

Self organization of steps on CdTe (001) vicinal surfaces studied by scanning tunneling microscopy

CEA-CNRS, Grenoble, France

12:00

Juozas Vaitkus

Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and simulation of atom behavior

Vilnius University, Lithuania

12:15

Heiko Schuler

Size and shape modification of self assembled InAs dots and stacked layers by In-situ etching

Max-Planck-Inst. Festkoerperforschung, Stuttgart, Germany

12:30

Anne Ponchet

Ga_1-xIn_xAs islands grown by GSMBE on (113)B InP substrate: a comparison with the case of (001) InP substrate

CEMES-CNRS, Toulouse, France

12:45

Fredj Hassen

Growth, characterisation of quantum dots in InP/GaP(100) and (111)A,B

Fac. Sciences Monastyr, Tunisia

13:00

Lunch

15:00

Arthur L. Smirl

The effects of crystallographic orientation on the nonlinear optical properties of quantum wells

LPQE, Univ. of Iowa, USA

15:30

Nikos T. Pelekanos

Giant piezoelectric effect in GaN self-assembled quantum dots

CEA-CNRS, Grenoble, France

15:45

G. Bremond

Optical study of Ge nanostructures grown on a Si(118) vicinal substrate

UMR-CNRS, Villeurbanne, France

16:00

Jorge J. Sánchez

Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by MBE

ETSI Telecomunicación, UPM, Madrid, Spain

16:15

Fu-Yi Tsai

Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates

National Chiao Tung Univ., Taiwan

16:30

Jorge J. Sánchez

Optical investigation of the relaxation process in InGaAs/GaAs SSQW grown on (001) and (111)B GaAs substrates

ETSI Telecomunicación, UPM, Madrid, Spain

16:45

Coffee Break

17:30

Satoshi Hiyamizu

Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by MBE

Osaka University, Japan

18:00

Kiyoshi Kanisawa

Two-dimensionally grown high-quality InSb on GaAs(111)A substrates

NTT Basic Research Laboratories, Japan

18:15

AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by MBE on GaAs (n11)A substrates

ATR Adaptive Commun. Res. Labs., Kyoto, Japan

18:30

Lutz Geelhar

A scanning tunneling microscopy study of the GaAs(112) surfaces

Fritz-Haber-Inst. Berlin, Germany

18:45

A. N. Efimov

Micromechanics of coherent non-cubic multilayer structures

Ioffe Institute, St. Petersburg, Russia

8:45

Elias Towe

A perspective on novel III-V optoelectronic devices fabricated on crystalline surfaces other than the conventional (001)

Univ. of Virginia, USA

9:15

Hideki Hasegawa

Selective MBE growth of quantum wire-dot coupled structures with novel high index facets for realization of InGaAs single electron transistor arrays

Hokkaido Univ., Sapporo, Japan

9:30

Bon Jae Koo

Light emission and the quantum efficiency of lateral P-N junctions on patterned GaAs (100) substrates

Imperial College, London, UK

9:45

Chantal Fontaine

(Ga,In)As piezoelectric quantum wells on GaAs (111)B 0.5° off towards [1-1-1] substrates: Molecular beam epitaxy and optical properties

LAAS-CNRS, Toulouse, France

10:00

Nikos T. Pelekanos

Multiperiod piezoelectric-barrier all-optical light modulator

CEA-CNRS, Grenoble, France

10:15

Manuel J. Romero

Piezoelectric InGaAs/GaAs (111)B MQW photodiodes: optoelectronic properties by EBIC and cathodoluminescence

Fac. Ciencias, Univ. de Cádiz, Spain

10:30

Coffee Break

11:00

Stefano Sanguinetti

Optical and morphological properties of InGaAs/GaAs quantum dots grown on novel index surfaces

I.N.F.M., Milano, Italy

11:30

Marina Gutiérrez

Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs (111)B multiple quantum well p-i-n photodiodes

Fac. Ciencias, Univ. de Cádiz , Spain

11:45

Jieming Feng

Optical transitions of GaAs/Al0.35Ga0.65As asymmetric double quantum wells grown on GaAs (n11)A (n=1-4) substrates

Doshisha Univ, Kyoto, Japan

12:00

Jesse Groenen

Two-coupled level scheme for polar phonons in ternary alloys: Raman investigation on (001), (011) and (111)-oriented layers

Univ. Paul Sabatier, Toulouse, France

12:15

José Ignacio Izpura

Piezoelectric field determination in strained InGaAs quantum wells grown on (111)B GaAs substrates by differential electroabsortion measurements

ETSI Telecomunicación, UPM, Madrid, Spain

12:30

Uwe Jahn

Cathodoluminescence Investigations of Vertically Stacked Sub-µm Arrays of Quantum Wires on Patterned GaAs (311) A Substrates

Paul-Drude-Institut, Berlin, Germany

12:45

Markus Pristovsek

Study of the GaAs (113), (-1-1-3), (115) and (-1-1-5) Surfaces by LEED and RAS

T.U. Berlin, Germany

13:00

Lunch

14:30

Arnoldo Majerfeld

MOVPE growth and properties of GaAs/AlGaAs and InGaAs/GaAs QW’s on (111)A substrates

Univ. of Colorado, USA

15:00

Lili Vescan

Growth of Si and SiGe on (113) planes by LPCVD and Optical Properties

ISI, Julich, Germany

15:15

Alfredo Sanz Hervás

Determination of growth rates and structural parameters in high quality GaAs/AlGaAs MQW structures grown by MOVPE on (111)A GaAs

ETSI Telecomunicación, UPM, Madrid, Spain

15:30

Francois Lelarge

Experiments and Monte-Carlo Simulations of Self-ordered Nanostructures Grown by OMCVD on V-grooved Substrates

IMO-EPFL, Laussane, Switzerland

15:45

Wang Guohong

Composition Dependence of AlGaInP on GaAs Substrate Orientation Grown by LP-MOCVD

Inst. of Semiconductors, Beijing, China

16:00

Visit to Segovia + Workshop dinner

8:45

Mark Hopkinson

Prospects for extended long-wavelength operation of InGaAs/GaAs lasers grown by MBE on (111)B substrates

Univ. of Sheffield, UK

9:15

Marina Gutiérrez

New relaxation mechanisms in InGaAs/GaAs (111)B MQW grown by MBE

Fac. Ciencias, Univ. de Cádiz, Spain

9:30

Chantal Fontaine

MBE (111)B LT homoepitaxial GaAs: Role of growth and annealing temperatures and layer thickness on crystal quality

LAAS-CNRS, Toulouse, France

9:45

Salah M. Bedair

Effect of GaAs substrate orientation on ordered GaInP grown by atomic layer epitaxy

North Carolina State Univ., USA

10:00

Constantino Villar

High-resolution x-ray diffraction study of AlAs/AlxGa1-xAs/GaAs quantum well structures grown by MBE on (11n)A GaAs

ETSI Telecomunicación, UPM, Madrid, Spain

10:15

Tadashi Ohachi

Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n=1-4) substrates

Doshisha Univ. Kyoto, Japan

10:30

Coffee Break

11:00

Pablo O. Vaccaro

Lateral-junction devices grown by MBE on GaAs (n11)A patterned substrates

ATR Adaptive Commun. Reserach Labs., Kyoto, Japan

11:30

Paloma Tejedor

Morphological instabilities during homoepitaxial growth on vicinal GaAs(110) surfaces: From step bunching to self-organized growth

ICM - CSIC, Madrid, Spain

11:45

Robin L. Williams

Atomically smooth templates for Indium adatom migration using CBE growth on CAIBE etched InP substrates

Inst. Microstructural Sciences, NRC, Otawwa, Canada

12:00

Open Discussion

13:00

Workshop closing

13:30

Lunch

15:00

Bus to Barajas Airport & Madrid