High Speed Electronics Laboratory


RECENT PUBLICATIONS (1996-)

* D.J. DUNSTAN, P. KIDD, R. BEANLAND, A. SACEDON, I. GONZALEZ, F.J. PACHECO
"Predictability of Plastic Relaxation in Metamorphic Epitaxy"
Journal of Material Science Technology, 12, 181 (1996)

 
* A.L. ALVAREZ, F. CALLE, A. SACEDON, E. CALLEJA, E. MUÑOZ, R. GARCIA, L. GONZALEZ, Y. GONZALEZ, H.G. COLSON, P. KIDD, R. BEANLAND, P. GOODHEW
"Non-uniform strain relaxation in InGaAs layers"
Solid State Electronics, 40, 647 (1996)

 
* M.A. SANCHEZ-GARCIA, F.J. SANCHEZ, F. CALLE, E. MUÑOZ, E. CALLEJA, K.S. STEVENS, M. KINNIBURGH, R. BERESFORD, B. BEAUMONT, P. GIBART
"Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates"
Solid State Electronics, 40, 81 (1996)

 
* I. IZPURA, J.F. VALTUEÑA, J.L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA, E. MUÑOZ
"Transient Negative Photocurrent and Out-of-Well Dipole Kinetics in Novel Piezoelectric InGaAs/GaAs MQW P-I-N Diodes"
Solid State Electronics, 40, 463-467 (1996)

 
* J.L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA, E. MUÑOZ, A. SANZ-HERVAS, G. DE BENITO, M. LOPEZ
"Photoinhibition of the quantum confined stark effect in piezoelectric multiple quantum wells"
Physical Review B, 53, 15469-15472 (1996)

 
* J.L. SANCHEZ-ROJAS, A. SACEDON, A. SANZ-HERVAS, E. CALLEJA, E. MUÑOZ, E.J. ABRIL
"Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices"
Solid-State Electronics, 40, 591-595 (1996)

 
* E. CALLEJA, F. SANCHEZ, E. MUÑOZ, E. VIGIL, F. OMNES, P. GIBART, J.M. MARTIN, G. GONZALEZ
"On the behavior of Silicon, Sulfur and Tellurium -related DX centers in LPE and VPE GaAsP Alloys"
Physical Review B53, 7736, (1996).

 
* A. SANZ-HERVAS, M. AGUILAR, J.L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA, E. MUÑOZ, E.J. ABRIL, M. LOPEZ
"High Resolution X-Ray Diffraction Study of Piezoelctric InGaAs/GaAs Multi Quantum Well p-i-n Photodiodes Grown on (111)B GaAs"
Applied Physics Letters, 69 (11), 1574 (1996)

 
* X.R. HUANG, A.N.CARTWRIGHT, D.R.HARKEN, D.S. McCALLUM, A.L. SMIRL, J.L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA, E. MUÑOZ
"Per-Carrier Nonlinear Optical Response of [111-Oriented Piezoelectric InGaAs/GaAs Multiple Quantum Wells"
Journal of Applied Physics, 79, 417-423 (1996)

 
* P. KIDD, D.J. DUNSTAN, H.G. COLSON, M.A. LOURENÇO, A. SACEDON, F. GONZALEZ-SANZ, L. GONZALEZ, Y. GONZALEZ, R. GARCIA, D. GONZALEZ, F.J. PACHECO, P.J. GOODHEW
"Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers"
J. Crystal Growth, 169, 649-659 (1996)

 
* F.J. SANCHEZ, D. BASAK, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. MUÑOZ, I. IZPURA, F. CALLE, J.M.G. TIJERO, B. BEAUMONT, P. LORENZINI, P. GIBART, T.S CHENG, C.T. FOXON, J.W. ORTON
"Yellow Band and Deep Levels in Undoped MOVPE GaN"
MRS Internet J. Nitride Semicond. Research 1, Art. 7 (1996).

 
* P. LUGLI, M. PACIOTTI, E. CALLEJA, E. MUÑOZ, J.L. SANCHEZ-ROJAS, F. DESSENNE, R. FAUQUEMBERGUE, J.L. THOBEL, G. ZANDLER
"HEMT Models and Simulations"
"Pseudomorphic HEMT Technology and Applications", R.I. Ross and S.P. Svenson Eds., Kluwer Academic, Holanda. (1996)

 
* J.F. VALTUEÑA, A. SACEDON, A.L. ALVAREZ, I. IZPURA, F. CALLE, E. CALLEJA, G. MACPERSON, P.J. GOODHEW, F.J. PACHECO, R. GARCIA, S.I. MOLINA
"Influence of the surface morphology on the relaxation of low strained InxGa1-xAs linear buffer structures"
J. Crystal Growth 182, 281-291 (1997)

 
* J.L. SANCHEZ-ROJAS, A. SACEDON, J.F. VALTUEÑA, A. SANZ-HERVAS, I. IZPURA, E. CALLEJA, E. MUÑOZ, E. J. ABRIL M. AGUILAR
"Charge Accumulation Effects in InGaAs/GaAs (111)- Oriented Piezo- electric Multiple Quantum Wells"
Microelectronics Journal 28, 767-775 (1997).

 
* T.C. ROJAS, S.I. MOLINA, M.J. ROMERO, A. SACEDON, E. CALLEJA, R. GARCIA
"Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates"
Material Science & Engineering B44, 106 (1997)

 
* E. CALLEJA, F.J. SANCHEZ, D. BASAK, M.A. SANCHEZ-GARCIA, E. MUÑOZ, I. IZPURA, F. CALLE, J.M.G. TIJERO, J.L. SANCHEZ-ROJAS, B. BEAUMONT, P. LORENZINI, P. GIBART
"Yellow Luminescence and Related Deep States in Undoped GaN"
Physical Review B55, 4689-4694 (1997)

 
* I. IZPURA, J.F. VALTUEÑA, E.MUÑOZ
"Surface Band-Bending Assessment by Photocurrent Techniques. Application to III-V Semiconductors"
Semicond. Sci. Technol., 12, 678-686 (1997)

 
* A. SANZ-HERVAS, M. AGUILAR, J.L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA, E. MUÑOZ, C. VILLAR, E.J. ABRIL, M. LOPEZ
"Observation of non-trigonal Lattice Distortion in Pseudomorphic InGaAs/GaAs Superlattices Grown on Misoriented (111)B GaAs"
Journal of Applied Physics, 82 (7), 3297 (1997)

 
* E. MUÑOZ, E. MONROY, J.A. GARRIDO, I. IZPURA, F.J. SANCHEZ, M.A. SANCHEZ-GARCIA, E. CALLEJA, B. BEAUMONT, P. GIBART
"Photoconductor Gain Mechanism in GaN Ultraviolet Detectors"
Applied Physics Letters, 71(7), 870-872 (1997)

 
* J.F. VALTUEÑA, I. IZPURA, J.L. SANCHEZ-ROJAS, E. MUÑOZ, E.A. KHOO,  J.P.R. DAVID, J. WOODHEAD, R. GREY, G.J. REES

”Memory Effects on Piezoelectric InGaAs/GaAs MQW PIN diodes”
Microelectronics Journal 28, 757-765 (1997).
 
* J.L. SANCHEZ-ROJAS, E. MUÑOZ, A. SACEDON, J.F. VALTUEÑA, I. IZPURA, E. CALLEJA

“Optoelectronic properties of piezoelectric [111]-oriented InGaAs/GaAs MQW and superlattice devices”
Actas de la 1ª Conferencia de Dispositivos Electrónicos (CDE97). Barcelona, Servei de Publicacions de la UPC, 451-456 (1997).
 
* F. CALLE, F.J. SANCHEZ, J.M.G. TIJERO, M.A. SANCHEZ-GARCIA, E. CALLEJA, R. BERESFORD
"Excitonic and Donor-Acceptor Recombination in Undoped GaN on Si(111)"
Semicond. Sci. Technol., 12, 1396 (1997).

 
* E. CALLEJA, M.A. SANCHEZ-GARCIA, E. MONROY, F.J. SANCHEZ, E. MUÑOZ, A. SANZ-HERVAS, C. VILLAR, M. AGUILAR,
"Growth Kinetics and Morphology of High Quality AlN grown on Si(111) by Plasma-assisted Molecular Beam Epitaxy"
J. Appl. Phys., 82, 4681-4683 (1997).

 
* R. SPORKEN, C. SILIEN, F. MALENGREAU, K. GRIGOROV, R. CAUDANO, F.J. SANCHEZ, E. CALLEJA, E. MUÑOZ, B. BEAUMONT, P. GIBART
"XPS Study of Au/GaN and Pt/GaN Contacts"
MRS Internet J. Nitride Semicond. Research, 2, Art. 23 (1997).

 
* E. MONROY, J.A. GARRIDO, E. MUÑOZ, I. IZPURA, F.J. SANCHEZ, M.A. SANCHEZ-GARCIA, E. CALLEJA, B. BEAUMONT, P. GIBART,
"Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors"
MRS Internet J. Nitride Semicond. Research, 2, Art. 12 (1997).

 
* F.J. SANCHEZ, F. CALLE, D. BASAK, J.M.G. TIJERO, M.A. SANCHEZ-GARCIA, E. MONROY, E. CALLEJA, E. MUÑOZ, B. BEAUMONT, P. GIBART, J.J. SERRANO J.M. BLANCO
"Yellow Luminescence in Mg-doped GaN"
MRS Internet J. Nitride Semicond. Research, 2, Art. 28 (1997).

 
* M.A. SANCHEZ-GARCIA, E. CALLEJA, E. MONROY, F.J. SANCHEZ, F. CALLE, E. MUÑOZ, A. SANZ-HERVAS, C. VILLAR, M. AGUILAR
"Study of High Quality AlN Layers Grown on Si(111) Substrates by Plasma-assisted Molecular Beam Epitaxy"
MRS Internet J. Nitride Semicond. Research, 2, Art. 33 (1997).

 
* D. BASAK, M. VERDU, M. T. MONTOJO, M.A. SANCHEZ-GARCIA, F.J. SANCHEZ, E. MUÑOZ, E. CALLEJA
"Reactive Ion Etching of GaN Layers Using SF6"
Semicond. Sci. Technol., 12, 1654 (1997).

 
* B. BEAUMONT, S. HAFFOUZ, P. GIBART, M. LEROUX, PH. LORENZINI, E. CALLEJA, E. MUÑOZ
"Violet GaN-Based LEDs fabricated by MOVPE"
Materials Science & Engineering B50, 296 (1997).

 
* J.L. SANCHEZ-ROJAS, A. GUZMAN, E. MUÑOZ, J.J. SANCHEZ, E. CALLEJA, A. SANZ-HERVAS, C. VILLAR, M. AGUILAR, M.T. MONTOJO, O. VERGARA, L.J. GOMEZ
"Design and Characterization of Two Color GaAs Based Quantum Well Infrared Detector Structures"
IEEE Proc. Advanced Workshop on Frontiers in Electronics, Tenerife, Spain, 65 (1997)

 
* I. IZPURA, E. MUÑOZ
"Epitaxial Photoconductive Detectors: A Kind of Photo-FET Devices"
IEEE Proc. Advanced Workshop on Frontiers in Electronics, Tenerife, Spain, No. 97TH8292, 73-80 (1997)

 
* E. MUÑOZ
"Piezoelectric III-V Semiconductor Devices"
IEEE Proc. Advanced Workshop on Frontiers in Electronics, p. 51, (invited paper) Tenerife, Spain, (1997)

 
* M.A. SANCHEZ-GARCIA, E. CALLEJA, E. MONROY, F.J. SANCHEZ, F. CALLE, E. MUÑOZ, R. BERESFORD
"The Effect of the III/V Ratio and Substrate Temperature on the Morphology and Properties of GaN and AlN Layers Grown by Molecular Beam Epitaxy on Si(111)"
J. Crystal Growth, 183, 23-30 (1998).

 
* M.A. SANCHEZ-GARCIA, E. CALLEJA, E. MONROY, F.J. SANCHEZ, F. CALLE, E. MUÑOZ, R. BERESFORD
"The Effect of the III/V Ratio and Substrate Temperature on the Morphology and Properties of GaN and AlN Layers Grown by Molecular Beam Epitaxy on Si(111)"
J. Crystal Growth, 183, 23-30 (1998).
 
* T.C. ROJAS, S.I. MOLINA, A. SACEDON, F. VALTUEÑA, E. CALLEJA, R. GARCIA
"Relaxation Mechanism of InGaAs Single and Graded Layers Grown on (111)B GaAs"
Thin Solid Films, 317, 270-273 (1998)

* A.L. ALVAREZ, F. CALLE, J.F. VALTUEÑA, J. FAURA, M. A. SANCHEZ, E. CALLEJA, E. MUÑOZ, J. R. MORANTE, D. GONZALEZ, R. GARCIA-ROJA
"Influence of Interface Dislocations on Surface Kinetics During Epitaxial Growth of InGaAs"
Applied Surface Science, 123/124, 303 (1998).
 
* B. BEAUMONT, F. CALLE, S. HAFFOUZ, E. MONROY, M. LEROUX, E. CALLEJA, P. LORENZINI, E. MUÑOZ, P. GIBART
"Blue-UV Homojunction GaN LEDs Fabricated by MOVPE"
Mat. Sci. Forum 264-268, 1425. Trans. Tech. Publ. Ltd. (1998)

* F.J. PACHECO, D. ARAUJO, S.I. MOLINA, R. GARCIA, A. SACEDON, F. GONZALEZ-SANZ, E. CALLEJA, P. KIDD, M.A. LOURENCO
"Chracterisation by TEM and X-ray diffraction on linearly graded composition InGaAs buffer layers on (001) GaAs"
Mat. Sci. Technol., 14, 1273-1278 (1998)
 
* F.J. SANCHEZ, F. CALLE, M.A. SANCHEZ-GARCIA E. CALLEJA, E. MUÑOZ, C.H. MOLLOY, D.J. SOMERFORD, J.J. SERRANO, J.M. BLANCO
"Experimental Evidence for Be Shallow Acceptor in GaN Grown on Si(111) by Molecular Beam Epitaxy"
Semicond. Sci. Technol., 13, 1130-1133 (1998).
 
* M.A. SANCHEZ-GARCIA, E. CALLEJA, F.J. SANCHEZ, F. CALLE, E. MONROY, D. BASAK, E. MUÑOZ, C. VILLAR, A. SANZ- HERVAS, M. AGUILAR, J.J. SERRANO, J.M. BLANCO
"Growth Optimization and Doping with Si and Be of High Quality GaN on Si(111) by Molecular Beam Epitaxy"
J. Electron. Mater., 27, 276-281 (1998).
 
* E. MONROY, E. MUÑOZ, F.J. SANCHEZ, F. CALLE, E. CALLEJA, B. BEAUMONT, P. GIBART
"High-performance GaN p-n Junction Photodetectors for Solar Ultraviolet Applications"
Semicond. Sci. and Technol., 13, 1042 (1998)
 
* J.F. VALTUEÑA, J.A. GARRIDO, I. IZPURA
"1/f Noise in InGaAs/GaAs Linear Graded Buffer Layers"
IEEE Transactions on Electron Devices, 45(6), 1201-1206 (1998)

* J.A. GARRIDO, E. MONROY, I. IZPURA, E. MUÑOZ
“Photoconductive gain modelling of GaN photodetectors”
Semicond. Sci. Technol., 13, 563-568 (1998)

* J.J. SANCHEZ, O. MARTY, M. HOPKINSON, I. IZPURA, A. GUZMAN, J.M.G. TIJERO
“Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE”
J. Crystal Growth 192, 363-371 (1998)

* J.A. GARRIDO, F. CALLE, E. MUÑOZ, I. IZPURA, J.L. SANCHEZ-ROJAS
“Low frequency noise and screening effects in AlGaAn/GaN HEMTs”
Electronics Letters, 34(24), 2357-2359 (1998)

* S.A. DICKEY, A. MAJERFELD, J.L. SANCHEZ-ROJAS, A. SACEDON, E. MUÑOZ, A. SANZ-HERVAS, M. AGUILAR, B.W. KIM
“Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance”
Microelectronic Engineering, 43-44, 171-177 (1998).

* F. CALLE, E. MONROY, F.J. SANCHEZ, E. MUÑOZ, B. BEAUMONT, S. HAFFOUZ, M. LEROUX, P. GIBART
"The origin of UV and visible electroluminescence in homojunction GaN LEDs "
MRS Internet J. Nitride Semicond. Res. 3, Art. 24 (1998).

* E. MONROY, F. CALLE, C. ANGULO, P. VILA, A. SANZ, E. CALLEJA, E. MUÑOZ, B. BEAUMONT, F. OMNES, P. GIBART
"A GaN-based Solar UV detection instrument"
Appl. Optics 37, 5058-62 (1998).

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES, P. GIBART, J.A.MUÑOZ
"AlGaN:Si Schottky barrier photodiodes with fast response and high detectivity"
Appl. Phys. Lett. 73, 2146-48 (1998)

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES, B. BEAUMONT, P. GIBART, J.A. MUÑOZ, F. CUSSO
"Ultraviolet photodetectors based on AlGaN Schottky Barriers"
MRS Internet J. Nitride Semicond. Res. 3, art. 9 (1998).

* F.J. SANCHEZ, F. CALLE, M.A. SANCHEZ, E. CALLEJA, E. MUÑOZ, C.H. MOLLOY, D.S. SOMERFORD, F. KOSNICK, K. MICHAEL, J.M. SPAETH
"Luminescence of Be-doped GaN layers grown by MBE on Si (111)"
MRS Internet J. Nitride Semicond. Res. 3, art. 19 (1998)

* F. CALLE, E. MONROY, F.J. SANCHEZ, E. MUÑOZ, B. BEAUMONT, S. HAFFOUZ, M. LEROUX, P. GIBART
"Analysis of the UV and visible electroluminescence in homojunction GaN LEDs"
MRS Internet J. Nitride Semicond. Res. 3, art. 24 (1998)

* M.A. SANCHEZ, F.J. SANCHEZ, F.B. NARANJO, F. CALLE, E. CALLEJA, E. MUÑOZ, U. JAHN, K. PLOOG
"Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by MBE"
MRS Internet J. Nitride Semicond. Res. 3, art. 32 (1998)

* E. CALLEJA, M.A. SANCHEZ, D. BASAK, F.J. SANCHEZ, F. CALLE, P. YOUINOU, E. MUÑOZ, J.J. SERRANO, J.M. BLANCO, C. VILLAR, T. LAINE, J. OILA, K. SAARINEN, P. HAUTOJARVI, C. H. MOLLOY, D.J. SOMERFORD, I. HARRISON
"Effect of Ga/Si interdiffusion on Optical and Transport properties of GaN layers grown on Si(111) by molecular beam epitaxy"
Phys. Rev. B 58, 1550-59 (1998).

* R. SPORKEN, C. SILIEN, J. DUMONT, E. MONROY, F. CALLE, E. MUÑOZ
"Nitrides and their interfaces with metals studied by means of electron microscopies"
Proc. 3rd Int. Conf. Electric Charge in Insulators – Conf. Space Charge (1998)

* A.L. ALVAREZ, F. CALLE
"Interplay between interface dislocations and surface kinetics: contribution to the roughness of strained epitaxial layers"
Diffusion and Defect Forum, vols. 157-159, pp. 211-222. Scitec Pub. Ltd. (1998).

* M.A. SANCHEZ, E. CALLEJA, F. CALLE, F.J. SANCHEZ, E. MUÑOZ
"Properties of III-Nitrides grown on Si(111) substrates by plasma-assisted Molecular Beam Epitaxy"
Future Trends in Microelectronics, John Wiley, (1998)

* A. GUZMÁN, J.L. SÁNCHEZ ROJAS, J.M.G. TIJERO, J.J. SÁNCHEZ, E. CALLEJA, E. MUÑOZ
“Characterization of Quantum Well Infrared Detectors Structures”
Congreso Mid-Infrared Optoelectronics Materials and Devices (MIOMD98), Praga, Marzo (1998)

* J.A. GARRIDO, A. JIMÉNEZ, J.L. SÁNCHEZ-ROJAS, F. GONZÁLEZ-SANZ, E. MUÑOZ, F. OMNES, P. GIBART, M. VERDÚ, F.J. SÁNCHEZ, M.T. MONTOJO
“AlGaN/GaN High Electron Mobility Transistors”
WOCSDICE’98 Zeuthen, Germany , May, (1998)

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES, P. GIBART
"Low noise AlGaN metal-semiconductor-metal photodiodes"
Electronics Lett. 35, 240-241 (1999)

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES, B. BEAUMONT, P. GIBART
"Visible-blindness in Photoconductive and Photovoltaic AlGaN Ultraviolet Detectors\"
J. Electron. Mat. 28, 238-243 (1999).

* D. WALKER, E. MONROY, P. KUNG, M. HAMILTON, F. J. SANCHEZ, J. DIAZ, M. RAZEGHI
"High speed, low noise metal-semiconductor-metal ultraviolet photodetectors based on GaN"
Appl. Phys. Lett. 74, 762-764 (1999).

* C. DIAZ-PANIAGUA, M.A. HIDALGO, A. URBINA, F. BATALLAN, J.M. GILPEREZ, S. FERNANDEZ DE AVILA, F. GONZALEZ-SANZ, E. MUÑOZ
“Quantum lifetime in the 2DEG from high magnetic field magnetoresistance measurements”
Solid State Communications, 109, 57-62 (1999).

* I-H. LEE, J.J. LEE, P. KUNG, F.J. SANCHEZ, M. RAZEGHI
"Band-gap narrowing and potential fluctuation in Si-doped GaN"
Appl. Phys. Lett. 74, 102-104 (1999).

* E. MONROY, M. HAMILTON, D. WALKER, P. KUNG, F. J. SANCHEZ, M. RAZEGHI
"High-quality visible-blind AlGaN p-i-n photodiodes"
Appl. Phys. Lett. 74, pp. 1171-1173 (1999)

* J.A. GARRIDO, F. CALLE, E. MUÑOZ, I. IZPURA, J.L. SANCHEZ-ROJAS
“Low-frequency noise sources in AlGaN/GaN HEMTs”
Proc. Int. Conf. On Quantum 1/f noise and other low frequency fluctuations in electronic devices St. Louis, ed. P.H. Handel. 466, 761-783 (1999)

* E. MUÑOZ, E. MONROY, F. CALLE, M. A. SANCHEZ-GARCIA, E. CALLEJA, F. OMNES, P. GIBART, F. JAQUE, I. AGUIRRE DE CARCER
"AlGaN-based photodetectors for solar UV applications"
SPIE Proc. Vol. 3629, 200-210 (1999)

* E. CALLEJA, M.A. SANCHEZ-GARCIA, F.J. SANCHEZ, F. CALLE, F.B. NARANJO, E. MUÑOZ, S.I. MOLINA, A.M. SANCHEZ, F.J. PACHECO, R. GARCIA
“Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties”
J. Crystal Growth, 201/202, 296-317 (1999)

* M.A. SANCHEZ, E. CALLEJA, F.B. NARANJO, F.J. SANCHEZ, F. CALLE, E. MUÑOZ, A.M. SANCHEZ, F.J. PACHECO, S.I. MOLINA
"MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects"
J. Crystal Growth, 201/202, 415-418 (1999)

* E. MUÑOZ, E. MONROY, F. CALLE, E. CALLEJA, F. OMNES, B. BEAUMONT, P. GIBART
"AlGaN-Based UV Detectors and Applications"
Proc. LEOS'99, pp. 96-97, (1999)

* H. NOZAWA, T. SASAKI, C. AMANO, J. TEMMYO, E. MUÑOZ
"Reliability of 0.98-1.02 µm InGaas Laser Diodes -Improvement by Low Temperature Growth of Active Layer-"
Proc. LEOS'99, pp. 198-199 (1999)

* J.J. SANCHEZ, M. GUTIERREZ, D. GONZALEZ, G. ARAGON, J.M.G. TIJERO, J.L. SANCHEZ-ROJAS, I. IZPURA, R. GARCIA
“Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs Single Strained Quantum Wells grown on (111)B GaAs by Molecular Beam Epitaxy”
Elsevier Microelectronics Journal, 30, 373-378, (1999)

* J.J. SANCHEZ, J.M.G. TIJERO, J. HERNANDO, J.L. SANCHEZ-ROJAS, I. IZPURA
“Optical investigation of the relaxation process in InGaAs/GaAs SSQW grown on (001) and (111)B GaAs substrates”
Elsevier Microelectronics Journal, 30, 363-366, (1999)

M. HOPKINSON, J.J. SANCHEZ, M. GUTIERREZ, D. GONZALEZ, G. ARAGON, I. IZPURA, R. GARCIA
“Optical properties of InxGa1-xAs/GaAs MQW structures on (111)B GaAs grown by MBE: Dependence on substrate miscut”
Journal of Crystal Growth 201-202, 1085-1088 (1999)

* F. OMNES, N. MARENCO, S. HAFFOUZ, H. LAHRECHE, P. MIERRY, B. BEAUMONT, P. HAGEMAN, E. MONROY, F. CALLE, E. MUÑOZ
"Low Pressure MOVPE grown AlGaN for UV photodetector applications"
Materials Science and Engineering B59, 401-406 (1999)

* F. OMNÉS, N. MARENCO, B. BEAUMONT, PH. DE MIERRY
“Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications”
Journal of Applied Physics, Vol. 86 (9) 5286-5292 Noviembre (1999)

* E. MONROY,  F. CALLE, E. MUÑOZ
“AlGaN metal-semiconductor-metal photodiodes”
Applied Physics Letters Vol. 74 (22), (1999)

* E. MONROY, F. CALLE, A.A. GARRIDO, P. YOUINOU, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
“Si-doped AlxGa1-xN photoconductive detectors”
Semicond. Sc. Technol. 14, 685-689, (1999)

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
“AlGaN-Based Ultraviolet Photodetectors”
Actas 2ª Conferencia Dispositivos Electrónicos, 47-50, Junio (1999)

* M.N. BLANCO, E. REDEONDE, F. CALLE, I. MÁRTIL, G. GONZÁLEZ-DÍAZ
“High quality Si implanted In.53Ga.47As epitaxial layers and their application to n+p junction devices”
Actas 2ª Conferencia Dispositivos Electrónicos, 315-318, Junio (1999)

* E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P. GIBART
“High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers”
Electronics Letters Vol. 35 (17), 1488-1489, (1999)

* E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P. GIBART
“Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN”
Phys. Stat. Sol. Vol. 176, 1-5, (1999)

* J.A. GARRIDO, L.L. SÁNCHEZ-ROJAS, A. JIMÉNEZ, E. MUÑOZ
“Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis”
Applied Physics Letters, 75, 16, 2407-2409, (1999)

* A. GUZMÁN, J.L. SÁNCHEZ-ROJAS, J.M.G TIJERO, H. HERNANDO, E. CALLEJA, E. MUÑOZ, G. VERGARA, M.T. MONTOJO, L.J. GÓMEZ, P. RODRÍGUEZ, R. ALMAZÁN, M. VERDÚ
“Growth by MBE and characterization of two-color GaAs/AlGaAs Quantum Well Infrared Detectors”
Congreso de Dispositivos Electrónicos, Junio 1999

* A. GUZMÁN, J.L. SÁNCHEZ-ROJAS, J.M.G. TIJERO, J.J. SÁNCHEZ, J. HERNANDO, E. CALLEJA, E. MUÑOZ, G. VERGARA, M.T. MONTOJO, L.J. GÓMEZ, P. RODRÍGUEZ, R. ALMAZÁN, M. VERDÚ
“Optical characterisation of quantum well infra-red detector structures”
IEEE Proceedings-Optoelectronics, 146, 2 , 89-92, (1999)

* A. GUZMÁN, J.L. SANCHEZ-ROJAS, J.M.G. TIJERO, J. HERNANDO, E. CALLEJA, E. MUÑOZ, G. VERGARA, R. ALMAZÁN L.J. GÓMEZ, M. VERDÚ, M.T. MONTOJO
“Growth and characterization of a bound-to-quasi continuum QWIP with Al-draded triangular confinement barriers”
IEEE Photonics Technology Letters, (1999)

* J.A. GARRIDO, A. JIMÉNEZ, J.L. SÁNCHEZ-ROJAS, E. MUÑOZ, F. OMNÈS, P. GIBART
“Polarization Field Determination in AlGaN/GaN HFETs”
Phys. Stat. Sol., 176, 195-199, (1999)

* M.J. ROMERO, D. ARAÚJO, J.L. SÁNCHEZ-ROJAS, E. CALLEJA, E. MUÑOZ, R. GARCÍA
“Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence”
Microelectronics Journal 30, 413-417, (1999)

* J.J. SÁNCHEZ, J.M.G. TIJERO, I. IZPURA, J.L. SÁNCHEZ-ROJAS, M. HOPKINSON, M. GUTIÉRREZ, D. GONZÁLEZ, G. ARAGÓN, R. GARCÍA
“Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications”
Journal of Crystal Growth 206, 287-293, (1999)

* E. MUÑOZ, E. MONROY, F. CALLE, M. A. SÁNCHEZ, E. CALLEJA, F. OMNÈS, P. GIBART, F. JAQUE, I. AGUIRRE DE CÁRCER
“Novel AlGaN-based UV photodetectors bridge biology and electronics"
Proc. Advanced Workshop on Frontiers in Electronics, IEEE Press, (1999)

* E. MONROY, F. CALLE, E. MUÑOZ
“Visible-blind Ultraviolet Photodetectors Based on AlxGa1-xN Alloys”
26th  Int. Symp. Compound Semiconductors. Berlín, Alemania. Agosto (1999).

* M.J. ROMERO, M. GUTIERREZ, J.J. SANCHEZ, D. GONZALEZ, G. ARAGON, I. IZPURA, R. GARCIA
“Cathodoluminiscence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes”
Microelectronics Journal 30, 427-431 (1999)

* M. GUTIERREZ, D. GONZALEZ, G. ARAGON, J.J. SANCHEZ, I. IZPURA, R. GARCIA
“New relaxation mechanism in InGaAs/GaAs (111) MQW”
Microelectronics Journal 30, 467-470 (1999)

* J.I. IZPURA, J.J. SANCHEZ, J.L. SANCHEZ-ROJAS, E. MUÑOZ
“Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent”
Microelectronics Journal 30, 439-444 (1999)

* CÁCERES D., I. VERGARA, R. GONZÁLEZ, E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES
"Nanoindentation on AlGaN thin films"
J. Appl. Phys. 86, 6773-6778 (1999)

* MONROY E., F. CALLE, E. MUÑOZ, F. OMNES
"Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes"
Physica Status Solidi A Vol. 176, 157-161 (1999)

* OMNÉS F., N. MARENCO, B. BEAUMONT, PH. DE MIERRY, E. MONROY, F. CALLE, E. MUÑOZ
"Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications"
Journal of Applied Physics, Vol. 86 (9) 5286-5290 (1999)

* SÁNCHEZ-GARCÍA M.A., F.B. NARANJO, J.L. PAU, A. JIMÉNEZ, E. CALLEJA, E.MUÑOZ, S.I. MOLINA, A.M. SÁNCHEZ, F.J. PACHECO, R.GARCÍA
"Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE"
Phys. stat. sol. (a) 176, 447 (1999)

* E. MUÑOZ, E. MONROY, F. CALLE, F. OMNÈS, P. GIBART
“AlGaN Photodiodes for Monitoring the Solar UV Radiation”
Journal of Geophysical Research, Vol. 105, No. D4, 4865-4871 (2000)

* A. BOUHDADA, M. HANZAZ, P. GIBART, F. OMNÈS, E. MONROY, E. MUÑOZ,
"Modeling of the spectral response of AlxGa1-xN Schottky ultraviolet photodetectors"
Journal of Applied Physics vol. 87 (12), pp 8286-8290, (2000)

* A.F. BRAÑA, C. DÍAZ-PANIAGUA, F. BATALLAN, J.A. GARRIDO, E. MUÑOZ, F. OMNES
"Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements"
Journal of Applied Physics, 88(2), pp 932-937, (2000)

* F. CALLE, E. MONROY, E. MUÑOZ, F. OMNÈS, J.L. PAU, E. CALLEJA, F. JAQUE, B. BEAUMONT, P. GIBART
"Nitride Photodetectors for UV Monitoring"
en "Advanced Nanoelectronics: Devices, Materials, and Computing". Memoirs of ISIR, vol. 57, p. 165-166. The Institute of Scientific and Industrial Research, Osaka University. Osaka, Japón. 2000

* M.A. SÁNCHEZ-GARCÍA, F.B. NARANJO, J.L. PAU, A. JIMÉNEZ, E. CALLEJA, E. MUÑOZ
"Ultraviolet electroluminescence in GaN/AlGaN single heterojunction light emitting diodes grown on Si(111)"
J. Appl.. Phys. 87, pp 1596 (2000)

* C. CÓRDOBA, I. AGUIRRE DE CÁRCER, A. PÉREZ, A. SANZ, C. ANGULO, P. VILA, E. MONROY, E. MUÑOZ, F. JAQUE
"UV-B irradiance at Madrid during 1996, 1997, and 1998"
Journal of Geophy. Research, Vol. 105, pp 4903-4906, (2000)

* J. DUMONT, R. CAUDANO, R. SPORKEN, E. MONROY, E. MUÑOZ, B. BEAUMONT, P. GIBART
"Metal/GaN contacts studied by electron spectroscopies"
MRS Internet J. Nitride Semicond. Res. 5S1, W11.79 (2000)

* M. HANZAZ, A. BOUHDADA, E. MONROY, E. MUÑOZ, P. GIBART, F. OMNÈS
"Modeling of the spectral response of AlxGa1-xN p-n junction photodetectors"
Eur. Physical J. Appl. Phys. 11, pp. 29-34 (2000)

* E. MONROY, F.VIGUÉ, F. CALLE, I. IZPURA, E. MUÑOZ, J.-P. FAURIE
"Time response analysis of ZnSe and ZnMgBeSe based Schottky barrier photodetectors"
Appl. Phys. Lett. 77, pp 2761-2763 (2000)

* E. MONROY, F. CALLE, J.L. PAU, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
"Present Status of III-Nitride Based photodetectors"
Mat. Res. Soc. Symp. Vol 622, T3.7, pp 1-12 (2000)

* E. MONROY, F. CALLE, J.L. PAU, F.J. SÁNCHEZ, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
"Analysis and Modeling of AlXGa1-xN-Based Schottky Barrier Photodiodes"
J. Appl. Phys. 88, pp 2081-2091 (2000)

* E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNES, P. GIBART
"Visible-blind Ultraviolet Photodetectors based on AlGaN Alloys"
Inst. Phys. Conf. Ser. vol. 166, p. 431-434. IOP Pub. Ltd. (2000)

* E. MONROY, F. CALLE, E. MUÑOZ, F. OMNES
"III-Nitride Based UV Photodetectors"
in "III-Nitride Semiconductors: Applications and Devices", ed. E. T. Yu and M. O. Manasreh (Gordon and Breach, 2000)

* E. MUÑOZ, E. MONROY, F. CALLE, F. OMNÈS, P. GIBART
"AlGaN Photodiodes for Monitoring the Solar UV Radiation"
J. of Geophys. Research Vol. 105, pp 4865-4871, (2000)

* E. MUÑOZ, E. MONROY, J.L. PAU, F. CALLE, E. CALLEJA, F. OMNÈS, B. BEAUMONT, P. GIBART
"AlGaN-based UV Detectors and Applications"
Physica status solidi (a) 180, 293-300 (2000)

* E. MUÑOZ, E. MONROY, F. CALLE, E. CALLEJA, F. OMNÈS, B. BEAUMONT, P. GIBART
"AlGaN-based UV detectors and applications"
LEOS'99 12th Annual Meeting, pp 96-97, (1999), IEEE 99 CH37009, v.1, p 96-97 (2000)

* F.B. NARANJO, M.A. SANCHEZ-GARCIA, J.L. PAU, A. JIMENEZ, E. CALLEJA, E. MUÑOZ
"Study of the effects of Be and Mg codopingin GaN layers"
Phys. stat. sol. (a) 180, 97-102 (2000)

* F. OMNES, E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, P. GIBART
"AlxGa1-xN based UV visible-blind photodetector device applications"
OptoElectronics Review 8 (1), pp 43-55, (2000)

* F. OMNES, B. BEAUMONT, P. GIBART, E. MONROY, F. CALLE, E. MUÑOZ, E. DOGHECHE
"AlXGa1-xN Based UV Photodetectors and Waveguides"
Proc. SOTAPOCS'2000, pp 205-219 (2000)

* F. OMNES, E. MONROY, B. BEAUMONT, F. CALLE, E. MUÑOZ, P. GIBART
"AlGaN based structures on sapphire for visible to solar blind Schottky barrier UV photodetectors: towards high performance device applications"
Photodetectors : Materials and Devices V. SPIE Optoelectronics 3948, pp 234-249 (2000)

* T. PALACIOS, F. CALLE, M. VARELA, C. BALLESTEROS, E. MONROY, F. B. NARANJO, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. MUÑOZ
"Wet etching of GaN grown by molecular beam epitaxy on Si (111)"
Semicond. Sci. Technol. 15, 996-1000 (2000)

* J. L. PAU, E. MONROY, F. B. NARANJO, E. MUÑOZ, F. CALLE, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA
"High visible rejection AlGaN photodetectors on Si(111) substrates"
Appl. Phys. Lett. 76, pp. 2785-2787 (2000)

* J.L. SÁNCHEZ-ROJAS, J.A. GARRIDO, E. MUÑOZ"
"Tailoring of intenal fields in AlGaN/GaN and InGaN/GaN heterostructure devices"
Physical Review B, 61, 4, pp 2773-2778, (2000)

* F. VIGUÉ, P. DE MIERRY, J.-P. FAURIE, E. MONROY, F.CALLE, E. MUÑOZ
"High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-UV spectral range"
Electron. Lett 36, pp.826-827 (2000)

* M.A. SÁNCHEZ-GARCÍA, F.B. NARANJO, J.L. PAU, A. JIMÉNEZ, E. CALLEJA, E.MUÑOZ
"Ultraviolet electroluminescence in GaN/AlGaN single heterojuntion light emitting diodes grown on Si(111)"
J. Appl. Phys. 87, 1569 (2000)

* E. CALLEJA, M.A. SANCHEZ-GARCIA, F.J. SANCHEZ, F. CALLE, F.B. NARANJO, E. MUÑOZ, U. JAHN, K.H. PLOOG, B. MONEMAR, K .SAARINEN, P. HAUTOJARVI
"Luminescence properties of GaN nanocolumns grown by molecular beam epitaxy"
Phys. Rev. B 62, 16826 (2000)

* E. MUÑOZ, E. MONROY, J.L. PAU, F. CALLE, E. CALLEJA, F. OMNES, P. GIBART,
"AlGaN Ultraviolet Photodetectors and Applications"
Physica Status Solidi (a), 180, 293 (2000).

* M.A. SÁNCHEZ-GARCÍA, F.B. NARANJO, J.. PAU, A. JIMÉNEZ, E. CALLEJA, E. MUÑOZ,
"Ultraviolet Electroluminescence in GaN/AlGaN Single Heterojunction Light Emitting Diodes Grown on Si(111)"
Journal of Applied Physics, 87, 1596 (2000).

* E. CALLEJA, M.A. SÁNCHEZ-GARCÍA, F.J. SÁNCHEZ, F. CALLE, F.B. NARANJO, E. MUÑOZ, U. JAHN, K. PLOOG,
"Luminescence Properties and Defects in GaN Nanocolumns Grown by Molecular Beam Epitaxy"
Physical Review B62, 16826 (2000).

* A.M. SÁNCHEZ, F.J. PACHECO, S.I. MOLINA, R. GARCÍA, P. RUTERANA, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA,
"Inversion Domains in GaN Layers Grown on Si(111) by Molecular Beam Epitaxy"
Appl. Phys. Lett. (enviado en Dic. 2000). A

* A.F. BRAÑA, C. DÍAZ-PANIAGUA, F. BATALLAN, J.A. GARRIDO, E. MUÑOZ, F. OMNES
"Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements"
Journal of Applied Physics, 88(2), pp 932-937, (2000)

*F. CALLE, E. MONROY, E. MUÑOZ, F. OMNÈS, J.L. PAU, E. CALLEJA, F. JAQUE, B. BEAUMONT, P. GIBART
"Nitride Photodetectors for UV Monitoring"
en "Advanced Nanoelectronics: Devices, Materials, and Computing". Memoirs of ISIR, vol. 57, p. 165-166. The Institute of Scientific and Industrial Research, Osaka University. Osaka, Japón. 2000.

* J.I. IZPURA
"Side contact effects on the capacitance properties of junction devices. Application to III-Nitrogen structures"
Semiconductor Science and Technology, 16, 243-249 (2001)

* T. FLEISCHMANN, M. MORAN, M. HOPKINSON, H. MEIDIA, J.G. REES, A.G. CULLIS, J.L. SANCHEZ-ROJAS, I. IZPURA.
"Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition".
J. Appl. Phys., 89 (9), 4689-4696 (2001)

* S. CHO, J. KIM, A. MAJERFELD, J.J. SANCHEZ, E. MUÑOZ, I. IZPURA
"Evaluation of strained piezoelectric InGaAs/GaAs QW structures grown on (111)B GaAs by photoreflectance spectroscopy"
(Aceptado para publicación en Inst. Phys. Conf. Series, June 2001)

* S. CHO, A. MAJERFELD, A. SANZ-HERVAS, J.J. SANCHEZ, J.L. SANCHEZ-ROJAS, I. IZPURA
"Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates"
J. Appl. Phys., 90 (2), (2001)

* J.J. SANCHEZ, S.BLANC, C. GUERRET-PIECOURT, C. FONTAINE, R. MAMY, I. IZPURA
"Homoepitaxial layers on (111)B 1°off towards [-211] GaAs substrates grown by MBE: influence of growth conditions on surface morphology"
(Enviado al Journal of Crystal Growth)

* J.J. SANCHEZ, J.I. IZPURA, J.M.G. TIJERO, E. MUÑOZ, S. CHO, A. MAJERFELD
Pyroelectric study by differential photocurrent of pseudomorphic strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates"
(Enviado al Appl. Phys. Letters)

* C. GUERRET-PIECOURT, S.BLANC, C. FONTAINE, R. MAMY, A. ROCHER, M. HOPKINSON, J.J. SANCHEZ, I. IZPURA
"(111)B towards [2-1-1] GaAs grown by MBE: influence of the misorientation angle on surface morphology"
(Enviado al J. Vac. Sci. Technol.)

* J. SÁNCHEZ-PÁRAMO, J.M. CALLEJA, E. CALLEJA, M.A. SÁNCHEZ-GARCIA, ……
"Optical Investigation of Strain in Si-Doped GaN Films"
Appl. Phys. Lett. (aceptado 2001).

* E. CALLEJA, M.A. SANCHEZ-GARCIA, F. CALLE, F.B. NARANJO, E. MUÑOZ, U. JAHN, K.H. PLOOG, J. SANCHEZ, J.M. CALLEJA, K. SAARINEN, P. HAUTOJARVI
"MBE growth and doping of III-Nitrides on Si(111): Layer morphology and doping efficiency"
Journal of Mat. Science and Engineering B (en prensa)

* J. DUMONT, E. MONROY, E. MUÑOZ, P. BOIERIU, F. OMNÈS, R. SPORKEN
"Metal/GaN and metal/AlGaN contacts studied by XPS depth profiles and by electrical measurements"
J. Cryst. Growth (en prensa)

* J.-F. HOCHEDEZ, P. BERGONZO, M.-C. CASTEX, P. DHEZ, O. HAINAUT, M. SACCHI, J. ALVAREZ, H. BOYER, A. DENEUVILLE, P. GIBART, B. GUIZARD, J-P. KLEIDER, P. LEMAIRE, C. MER, E. MONROY, E. MUÑOZ, P. MURET, F. OMNÈS, J.L. PAU, V. RALCHENKO, D. TROMSON, E. VERWICHTE, J.?C. VIAL
"Diamond UV detectors for future solar physics missions"
Diamond and Related Mat. (en prensa)

* E. MONROY, F. CALLE, J. L. PAU, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
"AlGaN-based UV photodetectors"
J. Cryst. Growth (en prensa)

* E. MONROY, F. CALLE, J.L. PAU, E. MUÑOZ, F. OMNÈS, P. GIBART
"Low-noise Metal-Insulator-Semiconductor UV Photodiodes based on GaN"
Electron. Letters (en prensa)

* P. MURET, A. PHILIPPE, E. MONROY, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P. GIBART
"Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy"
E-MRS 2000 Spring Meeting Proc.

* J. L. PAU, E. MONROY, F. B. NARANJO, E. MUÑOZ, F. CALLE, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA
"AlGaN photodetectors grown on Si(111) by Molecular Beam Epitaxy"
J. Cryst. Growth (en prensa)

* J. L. PAU, E. MONROY, E. MUÑOZ, F. CALLE, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA
"Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)"
Electron. Lett. (en prensa)
 


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