f
E. MUÑOZ, E. MONROY, F. CALLE, F. OMNÈS, P. GIBART
"AlGaN photodiodes for monitoring the solar UV radiation"
J. Geophys. Res. 105, pp. 4865-4871 (2000).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P.GIBART
"Visible-blind ultraviolet photodetectors based on AlxGa1-xN alloys"
Proc. International Symposium in Compound Semiconductors
Inst. Phys. Conf. Ser. 166, Chapter 6, pp. 431-434 (2000).
C. CÓRDOBA, I. AGUIRRE DE CÁRCER, A. PÉREZ, A. SANZ, C. ANGULO,
P. VILA, E. MONROY, E. MUÑOZ, F. JAQUE
"UV-B Irradiance at Madrid (40:N, 3:W) during 1996, 1997 and 1998"
J. Geophys. Res. 105, pp. 4903-4906 (2000).
E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P. GIBART
"Schottky barrier ultraviolet photodetectors on Epitaxial Lateral
Overgrown GaN"
Physica Status Solidi A 176, pp. 141-145 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS
"Effects of bias on the responsivity of GaN metal-semiconductor-metal
photodiodes"
Physica Status Solidi A 176, pp. 157-161 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P. GIBART
"High UV/visible contrast photodiodes based on Epitaxial Lateral
Overgrown GaN layers"
Electron. Lett. 35, pp. 1488-1489 (1999).
E. MONROY, F. CALLE, J.A. GARRIDO, P. YOUINOU, E. MUÑOZ, F. OMNÈS,
B. BEAUMONT, P. GIBART
"Si-doped AlxGa1-xN photoconductive detectors"
Semicond. Sci. Technol. 14, pp. 685-689 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS
"AlGaN metal-semiconductor-metal photodiodes"
Appl. Phys. Lett. 74, pp. 3401-3403 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, P. GIBART
"Low-noise AlGaN metal-semiconductor-metal photodiodes"
Electron. Lett. 35, pp. 240-241 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
"Visible-blindness in Photoconductive and Photovoltaic AlGaN
Ultraviolet Detectors"
J. Electron. Mat. 28, pp. 240-245 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, B. BEAUMONT, F. OMNÈS, P.GIBART
"AlGaN-Based Ultraviolet Photodetectors"
Proc. Conferencia de Dispositivos Electrsnicos 1999, pp.47-50 (1999).
E. MUÑOZ, E. MONROY, F. CALLE, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA,
F. OMNÈS, P. GIBART, F. JAQUE, I. AGUIRRE DE CÁRCER
"AlGaN-based photodetectors for solar UV applications"
SPIE Proc. 3629, pp. 200-210 (1999).
F. OMNÈS, N. MARENCO, B. BEAUMONT, Ph. de MIERRY, E. MONROY, F. CALLE,
E. MUÑOZ
"Metalorganic vapor phase epitaxy of AlGaN for visible blind UV
photodetector applications"
J. Appl. Phys. 86, pp. 5286-5290 (1999).
F. OMNÈS, N. MARENCO, S. HAFFOUZ, H. LAHRECHE, Ph. de MIERRY,
B. BEAUMONT, P. HAGEMAN, E. MONROY, F. CALLE, E. MUÑOZ
"Low Pressure MOVPE grown AlGaN for UV photodetector applications"
Mater. Sci. Eng. B 59, pp. 401-406 (1999).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, P. GIBART, J.A. MUÑOZ
"AlxGa1-xN:Si Schottky barrier photodiodes with fast response and high
detectivity"
Appl. Phys. Lett. 73, pp. 2146-2148 (1998).
E. MONROY, F. CALLE, C. ANGULO, P. VILA, A. SANZ, J. A. GARRIDO,
E. CALLEJA, E. MUÑOZ, S. HAFFOUZ, B. BEAUMONT, F. OMNÈS, P. GIBART
"GaN-based solar-UV detector instrument"
Appl. Opt. 37, pp. 5058-5062 (1998).
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART,
J.A. MUÑOZ, F. CUSSÓ
"Ultraviolet photodetectors based on AlxGa1-xN Schottky Barriers"
MRS Internet J. Nitride Semicond. Res. 3, art. 9 (1998).
Accepted
J. L. PAU, E. MONROY, F. B. NARANJO, E. MUÑOZ, F. CALLE,
M. A. SÁNCHEZ-GARCÍA, E. CALLEJA
"High visible rejection AlGaN photodetectors on Si(111) substrates"
Appl. Phys. Lett. (Accepted).
E. MUÑOZ, E. MONROY, J. L. PAU, F. CALLE, E. CALLEJA, F. OMNÈS,
P. GIBART
"(Al,Ga)N Ultraviolet Photodetectors and Applications"
Physica Status Solidi A (Accepted).
F. OMNÈS, E. MONROY, B. BEAUMONT, F. CALLE, E. MUÑOZ, P. GIBART
"AlGaN based structures on sapphire for visible to solar blind
Schottky barrier UV photodetectors: towards high performance device
applications"
SPIE Proc. (Accepted).
F. OMNÈS, E. MONROY, E.-H. DOGHECHE, B. BEAUMONT, F. CALLE, E. MUÑOZ,
P. GIBART
"AlxGa1-xN-based UV photodetectors and waveguides"
SOTAPOCS Proc. (Accepted)
Book Chapters
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS
III-Nitride Based UV
Photodetectors, en "III-Nitride Semiconductors: Applications and
Devices"
Edited by E. T. Yu and M. O. Manasreh, Gordon and Breach (In
press, 2000).
F. OMNÈS, E. MONROY
Metalorganic vapor phase epitaxy grown hexagonal
GaN and AlGaN for UV visible-blind photodetector device applications,
en "Optoelectronic Properties of Semiconductors and Superlattices"
Edited by I. Ferguson and M. O. Manasreh, Gordon and Breach Science
Publishers (In press, 2000).
Submitted
E. MONROY, F. CALLE, J. L. PAU, F. J. SÁNCHEZ, E. MUÑOZ, F. OMNÈS,
B. BEAUMONT, P. GIBART
"Analysis and modeling of AlxGa1-xN-based Schottky barrier
photodiodes"
J. Appl. Phys. (Submitted)
E. MONROY, F. CALLE, E. MUÑOZ, F. OMNÈS, B. BEAUMONT, P. GIBART
"Present Status of III-Nitride Based Photodetectors"
MRS 2000 Spring Meeting Proceedings (Submitted)