PARTICIPANTS
Universidad Politécnica de Madrid (UPM) (coordination)
UPM coordinated the work related to photoconductive, Schottky junction and MSM detectors. It developed AlGaN layers for detectors by MBE technology. The research effort covered the growth and doping of AlGaN layers, the contact and metal-barrier technologies, 1/f noise studies, and the optical characterisation of such layers and Schottky barriers as photodetectors.
UPM performed research related to the growth by gas-source MBE of AlGaN P-N junctions, to be used as photodetectors. N- and P-type doping technology was developed.
UPM coordinated and performed the design and fabrication of an UV-B monitorization system based on a data acquisition board and on a compatible-PC. Optimized Schottky barrier detectors were used in this system.
UPM Scientific Team: E.
Muñoz, E.
Calleja, F.
Calle, Eva
Monroy, J.L.
Pau, M.A.
Sánchez
Centre de Recherche sur l’Heteroepitaxy
et ses Applications. CNRS, Valbonne. (CRHEA-CNRS)
CRHEA-CNRS developed AlGaN layers for photodetectors by MOVPE. The research effort covered the growth of AlGaN layers, the contact technology, the control of the recombination mechanism and the optical characterisation of such layers.
CRHEA-CNRS coordinated the activities related to the development of AlGaN P-N junctions as UV-B photodetectors. It growed by MOVPE AlGaN P-N junctions, used as photodetectors. N- and P-type doping technology was developed, being Si and Mg the dopants.
CRHEA-CNRS Scientific
Team: P.
Gibart, Franck
Omnès, B. Beaumont
Universidad Autónoma de Madrid (UAM)
UAM was responsible for the assessment and calibration of photodetectors. Detector parameters related to spectral response, responsivity, detectivity, gain or quantum efficiency, etc., with emphasis in the wavelength range below 300nm, were analyzed.
UAM Scientific Team:
F. Jaque, I. Aguirre